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| SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability K S2 G2 D1 D2 A G1 S1 SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 B C D F M G H 0.65 Nominal H J K L M Mechanical Data * * * * * * * * * Case: SOT-363 J D F L Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K72 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) D2 G1 S1 All Dimensions in mm S2 G2 D1 Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100C Pulsed VGSS ID Pd RJA Tj, TSTG 2N7002DW 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C C/W C Characteristic Drain-Gate Voltage RGS 1.0M Gate-Source Voltage (Note 1) Drain Current (Note 1) Total Power Dissipation Derating above TA = 25C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30120 Rev. 8 - 2 1 of 3 www.diodes.com 2N7002DW (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 1.0 0.5 80 Typ 70 3.2 4.4 1.0 22 11 2.0 7.0 11 Max 1.0 500 10 2.0 7.5 13.5 50 25 5.0 20 20 Unit V A nA V A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ordering Information (Note 4) Device 2N7002DW-7-F Notes: Packaging SOT-363 Shipping 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K72 YM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 M 4 YM K72 2001 2002 N May 5 Apr K72= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30120 Rev. 8 - 2 2 of 3 www.diodes.com 2N7002DW 1.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25C ID, DRAIN-SOURCE CURRENT (A) 0.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 5 VGS = 5.0V 5.5V 0.6 4 3 VGS = 10V 5.0V 0.4 2 1 0 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 6 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 1.5 VGS = 10V, ID = 0.5A 4 ID = 50mA 3 ID = 500mA VGS = 5.0V, ID = 0.05A 1.0 2 0.5 1 0 -55 -30 -5 20 45 70 95 120 145 0 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30120 Rev. 8 - 2 3 of 3 www.diodes.com 2N7002DW |
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